EE 206 Analysis of Microelectronic Circuits and DevicesMEF UniversityDegree Programs Computer EngineeringGeneral Information For StudentsDiploma SupplementErasmus Policy Statement
Computer Engineering
Bachelor Length of the Programme: 4 Number of Credits: 240 TR-NQF-HE: Level 6 QF-EHEA: First Cycle EQF: Level 6

Ders Genel Tanıtım Bilgileri

School/Faculty/Institute Faculty of Engineering
Course Code EE 206
Course Title in English Analysis of Microelectronic Circuits and Devices
Course Title in Turkish Mikroelektronik Devre ve Cihaz Analizi
Language of Instruction EN
Type of Course Flipped Classroom,Laboratory Work
Level of Course Introductory
Semester Spring
Contact Hours per Week
Lecture: 3 Recitation: None Lab: 2 Other: None
Estimated Student Workload 176 hours per semester
Number of Credits 7 ECTS
Grading Mode Standard Letter Grade
Pre-requisites EE 201 - Circuit Analysis
Expected Prior Knowledge Basic knowledge in the components and characteristics of electric circuits, and the circuit analysis techniques are expected.
Co-requisites None
Registration Restrictions Only Undergraduate Students
Overall Educational Objective To learn the behavior of semi-conductor electronic devices and their terminal characteristics, and how to bias these devices and how to analyze analog circuits employing these devices
Course Description This course provides a comprehensive analysis of microelectronic circuits and devices. The following topics are covered: semi-conductor basics: concepts and semi-conductor components; semiconductor diode: physical structure, terminal characteristics, analysis of diode circuits; Bipolar Junction Transistor (BJT): physical structure and operating modes, BJT as a switch, DC biasing, BJT as an amplifier, small-signal model, basic amplifier circuits; MOSFET: structure and operating modes, MOSFET as a switch, MOSFET amplifiers; Operational amplifiers: concepts and application examples.
Course Description in Turkish Bu ders mikroelektronik devre ve cihazların tam olarak analizini sağlamaktadır Aşağıdaki konular kapsanacaktır: yarıiletkenlerle ilgili kavramlar ve yarıiletken elemanlar; yarıiletken diyot: fiziksel yapı, uç karakteristikleri, diyotlu devreler; Bipolar Jonksiyonlu Transistör (BJT): yapısı ve türleri, anahtar olarak çalışma, kutuplama, kuvvetlendiriciler, küçük işaret analizi; MOSFET: yapısı ve türleri, anahtar olarak çalışma ve MOSFET li kuvvetlendiriciler; İşlemsel kuvvetlendiriciler ve uygulama örnekleri.

Course Learning Outcomes and Competences

Upon successful completion of the course, the learner is expected to be able to:
1) identify the basic physical behavior of semi-conductor electronic devices;
2) distinguish the terminal characteristics of semi-conductor electronic devices;
3) comprehend how to bias semi-conductor electronic devices;
4) analyze and design basic electronic circuits employing semi-conductor electronic devices;
5) construct electric circuits in the laboratory and analyze these circuits by making measurements;
6) conduct electric circuit experiments in the laboratory as a team work;
7) demonstrate communication ability through laboratory reports.
Program Learning Outcomes/Course Learning Outcomes 1 2 3 4 5 6 7
1) An ability to identify, formulate, and solve complex engineering problems by applying principles of engineering, science, and mathematics
2) An ability to apply engineering design to produce solutions that meet specified needs with consideration of public health, safety, and welfare, as well as global, cultural, social, environmental, and economic factors
3) An ability to communicate effectively with a range of audiences
4) An ability to recognize ethical and professional responsibilities in engineering situations and make informed judgments, which must consider the impact of engineering solutions in global, economic, environmental, and societal contexts
5) An ability to function effectively on a team whose members together provide leadership, create a collaborative and inclusive environment, establish goals, plan tasks, and meet objectives
6) An ability to develop and conduct appropriate experimentation, analyze and interpret data, and use engineering judgment to draw conclusions
7) An ability to acquire and apply new knowledge as needed, using appropriate learning strategies.

Relation to Program Outcomes and Competences

N None S Supportive H Highly Related
     
Program Outcomes and Competences Level Assessed by
1) An ability to identify, formulate, and solve complex engineering problems by applying principles of engineering, science, and mathematics H Exam,HW,Lab
2) An ability to apply engineering design to produce solutions that meet specified needs with consideration of public health, safety, and welfare, as well as global, cultural, social, environmental, and economic factors S HW,Lab
3) An ability to communicate effectively with a range of audiences S Lab
4) An ability to recognize ethical and professional responsibilities in engineering situations and make informed judgments, which must consider the impact of engineering solutions in global, economic, environmental, and societal contexts N
5) An ability to function effectively on a team whose members together provide leadership, create a collaborative and inclusive environment, establish goals, plan tasks, and meet objectives S Lab
6) An ability to develop and conduct appropriate experimentation, analyze and interpret data, and use engineering judgment to draw conclusions H Lab
7) An ability to acquire and apply new knowledge as needed, using appropriate learning strategies. N
Prepared by and Date ARİF MUSTAFAZADE , December 2020
Course Coordinator TUBA AYHAN
Semester Spring
Name of Instructor Prof. Dr. GÜLEN AKTAŞ

Course Contents

Week Subject
1) Basic of semiconductor behaviour, Conduction mechanisms, doping, drift and diffusion mechanisms
2) Introduction, diode and its electrical behavior
3) Basics of pn junction, small signal model, AC analysis of diode circuits
4) Diode models, DC analysis of diode circuits, Zener diode
5) Parasitics of pn junction (body resistances, junction and diffusion capacitances), other diode types, rectifiers and regulation using Zener diodes
6) Basics of BJT and its operating regions
7) Early effect, BJT models and characteristics
8) DC biasing of BJT circuits
9) Basics of MOSFET and its operation regions
10) MOSFET characteristics and important second order effects (channel length modulation, body effect)
11) DC biasing of MOSFET circuits
12) DC biasing of MOSFET circuits
13) Switching applications of BJTs and MOSFETs
14) Basic applications of BJTs and MOFETs in digital circuits
15) Final Exam/Project/Presentation Period
16) Final Exam/Project/Presentation Period
Required/Recommended ReadingsElectronic Devices and Circuit Theory, Robert L. Boylestad and Louis Nashelsky. 11th edition. Pearson Education.
Teaching MethodsLectures/contact hours using “flipped classroom” as an active learning technique
Homework and ProjectsThere will be 2 homework assignments.
Laboratory WorkStudents will carry out experiments on semi-conductor electronic devices.
Computer UseAt least one of the homework assignments is based on SPICE Simulations on computer or some questions in the homework is based on SPICE solutions
Other ActivitiesNone
Assessment Methods
Assessment Tools Count Weight
Laboratory 5 % 20
Quiz(zes) 5 % 20
Homework Assignments 2 % 10
Midterm(s) 1 % 20
Final Examination 1 % 30
TOTAL % 100
Course Administration

Instructor’s office and phone number: 5th Floor office hours: TBA email address: mustafazadea@mef.edu.tr Policies: • Missing a midterm: Provided that proper documents of excuse are presented, a make-up exam will be given for the missed midterm. • Missing a final: Faculty regulations. • Homework are due 1-2 weeks after it is announced. Late homework will be downgraded by 20% for each day passed the due date. • Exams are in closed-notes and closed-books format. • To be eligible of taking the final, you should attend 4 out of 5 lab sections and your midterm score should be at least 25 (out of 100). • A reminder of proper classroom behavior, code of student conduct: YÖK Regulations • Statement on plagiarism: YÖK Regulations http://3fcampus.mef.edu.tr/uploads/cms/webadmin.mef.edu.tr/4833_2.pdf

ECTS Student Workload Estimation

Activity No/Weeks Hours Calculation
No/Weeks per Semester Preparing for the Activity Spent in the Activity Itself Completing the Activity Requirements
Course Hours 14 2 3 70
Laboratory 5 2 2 3 35
Homework Assignments 2 4 3 14
Midterm(s) 2 15 2 34
Final Examination 1 21 2 23
Total Workload 176
Total Workload/25 7.0
ECTS 7